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The 2nd generation Intel® Xeon Phi™ processor family x200 (code-name Knights Landing) brings in new memory technology, a high bandwidth on package memory called Multi-Channel DRAM (MCDRAM) in addition to the traditional DDR4. MCDRAM is a high bandwidth (~4x more than DDR4), low capacity (up to 16GB) memory, packaged with the Knights Landing silicon. MCDRAM can be configured as a third level cache (memory side cache) or as a distinct NUMA node (allocatable memory) or somewhere in between. With the different memory modes by which the system can be booted, it becomes very challenging from a software perspective to understand the best mode suitable for an application. At the same time, it is also very essential to utilize the available memory bandwidth in MCDRAM efficiently without leaving any performance on the table.
This talk will cover methods and tools for users to analyze the suitable memory mode for an application. It will also cover the use the “memkind” library interface, a user-extensible heap manager built on top of jemalloc. This library interface lets users change their application memory allocations to the high bandwidth MCDRAM as opposed to the standard DDR4.
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Benchmark results were obtained prior to the implementation of recent software patches and firmware updates intended to address exploits referred to as "Spectre" and "Meltdown". Implementation of these updates may make these results inapplicable to your device or system.
Software and workloads used in performance tests may have been optimized for performance only on Intel® microprocessors. Performance tests, such as SYSmark and MobileMark, are measured using specific computer systems, components, software, operations and functions. Any change to any of those factors may cause the results to vary. You should consult other information and performance tests to assist you in fully evaluating your contemplated purchases, including the performance of that product when combined with other products. For more information, see Performance Benchmark Test Disclosure.